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1

DDR3 1600/1333/1066/800MHz DRAM Component Validation

Intel Platform Memory Operations

DDR3 1600/1333/1066/800MHz DRAM Component Validation Results This information is provided as a guide to component compliance. This testing is not intended to replace the normal OEM component qualification process. Intel encourages memory suppliers to validate their fastest speed/latency component. The slower speed/latency components using the same die revision as the listed fast component may not be explicitly listed in this table. This does not preclude the slower components from being submitted in memory modules for testing if the component has passed testing and has been listed in this table at the fastest speed/latency. Please contact the supplier directly to obtain information regarding the corresponding slower speed/latency parts. Validated DDR3 1600/1333/1066/800MHz DRAM Components Density

Width

Freq

Latency CL-tRCD-tRP

Notes

Component Date Code

EDJ1108BFBG-GN-F

1Gb

8

1600

11-11-11

-

1016

Elpida

EDJ1104BDSE-DJ-F

1Gb

4

1333

9-9-9

-

933

Elpida

EDJ1108BFBG-DJ-F

1Gb

8

1333

9-9-9

-

1010

Elpida

EDJ1108BDSE-DJ-F

1Gb

8

1333

9-9-9

-

913

Elpida

EDJ1116BBSE-DJ-F, ∇

1Gb

16

1333

9-9-9

-

846

EDJ1108BBSE-DJ-F

1Gb

8

1333

9-9-9

-

846

EDJ1104BASE-AE-E

1Gb

4

1066

7-7-7

-

831

Elpida

EDJ1104BASE-DJ-E

1Gb

4

1333

9-9-9

-

831

Elpida

EDJ1108BASE-DJ-E

1Gb

8

1333

9-9-9

-

729

Elpida

EDJ1108BASE-AE-E

1Gb

8

1066

7-7-7

-

729

Elpida

EDJ2204B1MB-AE-E

1Gb (DDP)

4

1066

7-7-7

-

831

Hynix

H5TQ1G83DFR-H9C

1Gb

8

1333

9-9-9

Hynix

H5TQ1G83DFR-PBC, ◊

1Gb

8

1600

11-11-1

-

1020

Hynix

H5TQ1G83TFR-PBC, ◊

1Gb

8

1600

11-11-1

-

946

Hynix

H5TQ2G63BFR-PBC

1Gb

16

1600

11-11-1

-

1008

Hynix

H5TQ2G83BFR-PBC

2Gb

8

1600

11-11-1

-

948

Hynix

H5TQ2G63BFR-H9C

2Gb

16

1333

9-9-9

-

940

Hynix

H5TQ2G43BFR-H8C

2Gb

4

1333

8-8-8

-

940

Hynix

H5TQ2G43BFR-H9C

2Gb

4

1333

9-9-9

-

940

Supplier

Part Number

Elpida

Elpida Elpida

2

DDR3 1600/1333/1066/800MHz DRAM Component Validation

1016

Intel Platform Memory Operations Validated DDR3 1600/1333/1066/800MHz DRAM Components Density

Width

Freq

Latency CL-tRCD-tRP

Notes

Component Date Code

H5TQ1G43TFR-H8C, ◊

1Gb

4

1333

8-8-8

-

933

Hynix

H5TQ1G43TFR-H9C, ◊

1Gb

4

1333

9-9-9

-

933

Hynix

H5TQ1G83TFR-H8C, ◊

1Gb

8

1333

8-8-8

-

933

Hynix

H5TQ1G83TFR-H9C, ◊

1Gb

8

1333

9-9-9

-

933

Hynix

H5TQ2G83BFR-H9C

2Gb

8

1333

9-9-9

-

936

Hynix

H5TQ2G83BFR-H8C

2Gb

8

1333

8-8-8

-

936

Hynix

H5TQ2G43AFR-H9C, ◊

2Gb

4

1333

9-9-9

-

904

Hynix

H5TQ2G43AFR-G7C, ◊

2Gb

4

1066

7-7-7

-

905

Hynix

H5TQ2G83AFR-G7C, ∇,◊

2Gb

8

1066

7-7-7

-

905

H5TQ1G43BFR-H8C, ◊

1Gb

4

1333

8-8-8

-

842

H5TQ1G43BFR-H9C, ∇,◊

1Gb

4

1333

9-9-9

-

842

H5TQ2G83AFR-H9C, ∇,◊

2Gb

8

1333

9-9-9

-

905

1Gb

16

1333

9-9-9

-

849

2Gb (DDP)

8

1066

7-7-7

-

836

Supplier

Part Number

Hynix

Hynix Hynix Hynix Hynix

H5TQ1G63BFR-H9C, ∇,◊

Hynix

H5TQ4G83MMR-G7C, ‡, ª, ¤

Hynix

H5TQ1G43AFP-G7C

1Gb

4

1066

7-7-7

-

827

H5TQ1G43AFP-H9C, ∇

1Gb

4

1333

9-9-9

-

827

2Gb

8

1333

9-9-9

-

827

1Gb (DDP)

4

1066

7-7-7

-

827

H5TQ1G43BFR-G7C, ∇,◊

1Gb

4

1066

7-7-7

-

835

1Gb

8

1066

7-7-7

-

844

1Gb

4

1066

7-7-7

-

835

H5TQ1G83BFR-H8C, ∇,◊

1Gb

8

1333

8-8-8

-

849

H5TQ1G83BFR-H9C, ∇,◊

1Gb

8

1333

9-9-9

-

849

1Gb

16

1066

7-7-7

-

832

H5TQ2G83MFR-G7C, ∇

2Gb

8

1066

7-7-7

-

823

H5TQ1G63AFP-G7C, ∇

1Gb

16

1066

7-7-7

-

813

Hynix Hynix Hynix Hynix Hynix Hynix Hynix Hynix Hynix Hynix Hynix

3

H5TQ2G83MFR-H9C, ∇

H5TQ2G43AMP-G7C, ∇

H5TQ1G83BFR-G7C, ∇,◊ H5TQ1G43BFR-G8C, ∇,◊ H5TQ1G63BFR-G7C, ∇,◊

DDR3 1600/1333/1066/800MHz DRAM Component Validation

Intel Platform Memory Operations Validated DDR3 1600/1333/1066/800MHz DRAM Components Density

Width

Freq

Latency CL-tRCD-tRP

Notes

Component Date Code

1Gb

16

1066

8-8-8

-

813

H5TQ1G83AFP-G7C, ∇

1Gb

8

1066

7-7-7

-

813

H5TQ1G83AFP-G8C, ∇

1Gb

8

1066

8-8-8

-

813

1Gb

8

1333

8-8-8

-

827

H5TQ1G83AFP-H9C, ∇

1Gb

8

1333

9-9-9

-

827

MT41J128M8JP-15E:G

1Gb

8

1333

9-9-9

-

1044

MT41J1G4THD-15E:D

2Gb (DDP)

4

1333

9-9-9

-

1042

Micron

MT41J256M8HX-15E

2Gb

8

1333

9-9-9

-

1023

Micron

MT41J128M16HA-15E

2Gb

16

1333

9-9-9

-

1023

Micron

MT41J512M4HX-15E

2Gb

4

1333

9-9-9

-

1023

Micron

MT41J256M4JP-15E, ∇

1Gb

4

1333

9-9-9

-

906

MT41J128M8JP-187E, ∇

1Gb

8

1066

7-7-7

-

844

MT41J128M8JP-15E, ∇

1Gb

8

1333

9-9-9

-

906

1Gb

4

1066

7-7-7

-

838

MT41J256M4HX-15E, ∇

1Gb

4

1333

9-9-9

-

838

MT41J512M4THR-187E

1Gb (DDP)

4

1066

7-7-7

-

838

MT41J128M8HX-187E, ∇

1Gb

8

1066

7-7-7

-

806

NT5CB128M8CN-CG

1Gb

8

1333

9-9-9

-

914

NT5CB128M8CN-CF

1Gb

8

1333

8-8-8

-

914

Nanya

NT5CB256M4AN-CG

1Gb

4

1333

9-9-9

-

812

Nanya

NT5CB256M4AN-BE

1Gb

4

1066

7-7-7

-

812

Nanya

NT5CB128M8CN-BE

1Gb

8

1066

7-7-7

-

812

Nanya

NT5CB64M16AP-BE, ∇

1Gb

16

1066

7-7-7

-

750

Supplier

Part Number

Hynix

H5TQ1G63AFP-G8C, ∇

Hynix Hynix Hynix Hynix Micron Micron

Micron Micron Micron Micron Micron Micron Nanya Nanya

H5TQ1G83AFP-H8C, ∇

MT41J256M4HX-187E, ∇

Nanya

NT5CB128M8AN-CG

1Gb

8

1333

9-9-9

-

803

Nanya

NT5CB128M8AN-CF

1Gb

8

1333

8-8-8

-

803

Nanya

NT5CB128M8AN-BE

1Gb

8

1066

7-7-7

-

812

4

DDR3 1600/1333/1066/800MHz DRAM Component Validation

Intel Platform Memory Operations Validated DDR3 1600/1333/1066/800MHz DRAM Components Density

Width

Freq

Latency CL-tRCD-tRP

Notes

Component Date Code

K4B2G0846D-HCH9

2Gb

8

1333

9-9-9

-

1031

Samsung

K4B1G0846F-HCK0, ◊

1Gb

8

1600

11-11-11

-

1004

Samsung

K4B2G0846C-HCK0, ◊

2Gb

8

1600

11-11-11

-

1007

Samsung

K4B1G0446F-HCH9, ◊

1Gb

4

1333

9-9-9

-

1001

Samsung

K4B1G0846F-HCH9, ◊

1Gb

8

1333

9-9-9

-

940

Samsung

K4B2G0446C-HCH9, ◊

2Gb

4

1333

9-9-9

-

940

Samsung

K4B4G0446A-HCH9, ◊

4Gb

4

1333

9-9-9

-

1010

Samsung

K4B4G0846A-HCH9, ◊

4Gb

8

1333

9-9-9

-

1010

Samsung

K4B8G0446A-MCF8, ◊

4Gb (DDP)

4

1066

7-7-7

-

1013

Samsung

K4B2G0846C-HCH9, ∇,◊

2Gb

8

1333

9-9-9

-

940

K4B2G0446B-HCF8, ◊

2Gb

4

1066

7-7-7

-

846

K4B2G0446B-HCH9, ∇,◊

2Gb

8

1333

9-9-9

-

846

K4B1G0846E-HCF8, ◊

1Gb

8

1066

7-7-7

-

843

1Gb

16

1066

7-7-7

-

913

Samsung

K4B1G0446E-HCF8, ◊

1Gb

4

1066

7-7-7

-

846

Samsung

K4B1G1646E-HCF8, ∇,◊ K4B1G0846E-HCH9, ◊

1Gb

8

1333

9-9-9

-

843

K4B2G0846B-HCH9, ∇,◊

2Gb

8

1333

9-9-9

-

837

1Gb

16

1333

9-9-9

-

913

Supplier

Part Number

Samsung

Samsung Samsung Samsung Samsung

Samsung Samsung

K4B1G1646E-HCH9, ∇,◊

Samsung

K4B1G0446D-HCF7, ◊

1Gb

4

800

6-6-6

-

829

Samsung

K4B1G0446D-HCF8, ◊

1Gb

4

1066

7-7-7

-

829

Samsung

K4B1G0446D-HCH9, ◊

1Gb

4

1333

9-9-9

-

829

Samsung

K4B1G0446E-HCH9, ◊

1Gb

4

1333

9-9-9

-

846

Samsung

K4B2G0446D-MCF7, µ, Φ, ª

1Gb (DDP)

4

800

6-6-6

-

829

Samsung

K4B2G0446D-MCF8, µ, Φ, ª

1Gb (DDP)

4

1066

7-7-7

-

829

Samsung

K4B2G0846B-HCF8, ◊

2Gb

8

1066

7-7-7

-

846

Samsung

K4B1G0846D-HCG9, ∇

1Gb

8

1333

8-8-8

-

808

5

DDR3 1600/1333/1066/800MHz DRAM Component Validation

Intel Platform Memory Operations Validated DDR3 1600/1333/1066/800MHz DRAM Components Density

Width

Freq

Latency CL-tRCD-tRP

Notes

Component Date Code

1Gb

8

1333

9-9-9

-

804

K4B1G1646D-HCF8, ∇

1Gb

16

1066

7-7-7

-

804

1Gb

8

1066

7-7-7

-

808

1Gb

16

800

6-6-6

-

808

K4B1G0846D-HCF7, ∇

1Gb

8

800

6-6-6

-

808

Supplier

Part Number

Samsung

K4B1G0846D-HCH9, ∇

Samsung Samsung Samsung Samsung

K4B1G0846D-HCF8, ∇ K4B1G1646D-HCF7, ∇

∇ Exceeds maximum VOX specification ° TDQS feature not functioning; not recommended to be used on RDIMM or UDIMM modules targeting server applications ± Exceeds minimum Rdie specification µ Exceeds IOL/IOH specification Φ Exceeds maximum RDL specification ª Exceeds maximum LPKG specification ¤ Exceeds maximum Slew Rate specification ◊ Write margin testing was performed at component level by Shmoo testing for voltage and timing, based on limited sampling

6

DDR3 1600/1333/1066/800MHz DRAM Component Validation